Ba(Ti0.8Sn0.2)O3 thin films prepared by radio-frequency magnetron sputtering for dynamic random access memory applications

Yu Fu Kuo; Tseung-Yuen Tseng

doi:10.1149/1.1390795

Ba(Ti_0.8Sn_0.2)O₃ thin films prepared by radio-frequency magnetron sputtering for dynamic random access memory applications

Yu Fu Kuo, Tseung-Yuen Tseng

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Polycrystalline thin films of Ba(Ti_0.8Sn_0.2)O₃ 100 nm thick were deposited on Pt/TiO₂/SiO₂/Sn(100) substrates by radio-frequency magnetron sputtering at various substrate temperatures. The films crystallized with high (111) diffraction intensity at a substrate temperature of 650°C, had good crystalline quality, and exhibited a large dielectric constant. The dielectric constant and leakage current of the films increased with an increase of the intensity ratio of (111)(110) peaks. This study also established a correlation between the dielectric constant, leakage current, and crystallinity of the films.

Original language	English
Pages (from-to)	236-237
Number of pages	2
Journal	Electrochemical and Solid-State Letters
Volume	2
Issue number	5
DOIs	https://doi.org/10.1149/1.1390795
State	Published - 1 May 1999

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abstract = "Polycrystalline thin films of Ba(Ti0.8Sn0.2)O3 100 nm thick were deposited on Pt/TiO2/SiO2/Sn(100) substrates by radio-frequency magnetron sputtering at various substrate temperatures. The films crystallized with high (111) diffraction intensity at a substrate temperature of 650°C, had good crystalline quality, and exhibited a large dielectric constant. The dielectric constant and leakage current of the films increased with an increase of the intensity ratio of (111)(110) peaks. This study also established a correlation between the dielectric constant, leakage current, and crystallinity of the films.",

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AU - Tseng, Tseung-Yuen

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N2 - Polycrystalline thin films of Ba(Ti0.8Sn0.2)O3 100 nm thick were deposited on Pt/TiO2/SiO2/Sn(100) substrates by radio-frequency magnetron sputtering at various substrate temperatures. The films crystallized with high (111) diffraction intensity at a substrate temperature of 650°C, had good crystalline quality, and exhibited a large dielectric constant. The dielectric constant and leakage current of the films increased with an increase of the intensity ratio of (111)(110) peaks. This study also established a correlation between the dielectric constant, leakage current, and crystallinity of the films.

AB - Polycrystalline thin films of Ba(Ti0.8Sn0.2)O3 100 nm thick were deposited on Pt/TiO2/SiO2/Sn(100) substrates by radio-frequency magnetron sputtering at various substrate temperatures. The films crystallized with high (111) diffraction intensity at a substrate temperature of 650°C, had good crystalline quality, and exhibited a large dielectric constant. The dielectric constant and leakage current of the films increased with an increase of the intensity ratio of (111)(110) peaks. This study also established a correlation between the dielectric constant, leakage current, and crystallinity of the films.

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Ba(Ti_0.8Sn_0.2)O₃ thin films prepared by radio-frequency magnetron sputtering for dynamic random access memory applications

Abstract

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