Ba(Ti0.8Sn0.2)O3 thin films prepared by radio-frequency magnetron sputtering for dynamic random access memory applications

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Abstract

Polycrystalline thin films of Ba(Ti0.8Sn0.2)O3 100 nm thick were deposited on Pt/TiO2/SiO2/Sn(100) substrates by radio-frequency magnetron sputtering at various substrate temperatures. The films crystallized with high (111) diffraction intensity at a substrate temperature of 650°C, had good crystalline quality, and exhibited a large dielectric constant. The dielectric constant and leakage current of the films increased with an increase of the intensity ratio of (111)(110) peaks. This study also established a correlation between the dielectric constant, leakage current, and crystallinity of the films.

Original languageEnglish
Pages (from-to)236-237
Number of pages2
JournalElectrochemical and Solid-State Letters
Volume2
Issue number5
DOIs
StatePublished - 1 May 1999

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