Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation

M. C. Ho*, R. A. Johnson, C. E. Chang, W. J. Ho, D. R. Pehlke, P. J. Zampardi, Mau-Chung Chang, P. M. Asbeck

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

A technique is presented which can significantly reduce the base-collector capacitance (Cbc) in AlGaAs/GaAs HBTs. Cbc is a key limiter of HBT microwave gain and bandwidth. The process uses high dose, high-energy ion implantation through the external base layer to compensate part of the heavily doped sub-collector. It also uses the more conventional self-aligned shallow implant to compensate the entire collector underneath the base contact. The total Cbc of the double implanted HBTs has been reduced more than 35% with this new technique as compared to devices with shallow implant only. Under proper conditions, the double implantation produces little damage to the base, thus the RF performance can be significantly improved. An fmax greater than 200 GHz has been obtained, comparable to the best previous reported results in common emitter HBTs.

Original languageEnglish
Pages86-87
Number of pages2
StatePublished - 1 Dec 1995
EventProceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA
Duration: 19 Jun 199521 Jun 1995

Conference

ConferenceProceedings of the 1995 53rd Annual Device Research Conference Digest
CityCharlottesville, VA, USA
Period19/06/9521/06/95

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