Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation

M. C. Ho; R. A. Johnson; C. E. Chang; W. J. Ho; D. R. Pehlke; P. J. Zampardi; Mau-Chung Chang; P. M. Asbeck

Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation

M. C. Ho^*, R. A. Johnson, C. E. Chang, W. J. Ho, D. R. Pehlke, P. J. Zampardi, Mau-Chung Chang, P. M. Asbeck

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

A technique is presented which can significantly reduce the base-collector capacitance (C_bc) in AlGaAs/GaAs HBTs. C_bc is a key limiter of HBT microwave gain and bandwidth. The process uses high dose, high-energy ion implantation through the external base layer to compensate part of the heavily doped sub-collector. It also uses the more conventional self-aligned shallow implant to compensate the entire collector underneath the base contact. The total C_bc of the double implanted HBTs has been reduced more than 35% with this new technique as compared to devices with shallow implant only. Under proper conditions, the double implantation produces little damage to the base, thus the RF performance can be significantly improved. An f_max greater than 200 GHz has been obtained, comparable to the best previous reported results in common emitter HBTs.

Original language	English
Pages	86-87
Number of pages	2
State	Published - 1 Dec 1995
Event	Proceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA Duration: 19 Jun 1995 → 21 Jun 1995

Conference

Conference	Proceedings of the 1995 53rd Annual Device Research Conference Digest
City	Charlottesville, VA, USA
Period	19/06/95 → 21/06/95

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@conference{c780b374d45e48398eb15a348d4153b2,

title = "Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation",

abstract = "A technique is presented which can significantly reduce the base-collector capacitance (Cbc) in AlGaAs/GaAs HBTs. Cbc is a key limiter of HBT microwave gain and bandwidth. The process uses high dose, high-energy ion implantation through the external base layer to compensate part of the heavily doped sub-collector. It also uses the more conventional self-aligned shallow implant to compensate the entire collector underneath the base contact. The total Cbc of the double implanted HBTs has been reduced more than 35% with this new technique as compared to devices with shallow implant only. Under proper conditions, the double implantation produces little damage to the base, thus the RF performance can be significantly improved. An fmax greater than 200 GHz has been obtained, comparable to the best previous reported results in common emitter HBTs.",

author = "Ho, {M. C.} and Johnson, {R. A.} and Chang, {C. E.} and Ho, {W. J.} and Pehlke, {D. R.} and Zampardi, {P. J.} and Mau-Chung Chang and Asbeck, {P. M.}",

year = "1995",

month = dec,

day = "1",

language = "English",

pages = "86--87",

note = "null ; Conference date: 19-06-1995 Through 21-06-1995",

}

Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation. / Ho, M. C.; Johnson, R. A.; Chang, C. E.; Ho, W. J.; Pehlke, D. R.; Zampardi, P. J.; Chang, Mau-Chung; Asbeck, P. M.

1995. 86-87 Paper presented at Proceedings of the 1995 53rd Annual Device Research Conference Digest, Charlottesville, VA, USA, .

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation

AU - Ho, M. C.

AU - Johnson, R. A.

AU - Chang, C. E.

AU - Ho, W. J.

AU - Pehlke, D. R.

AU - Zampardi, P. J.

AU - Chang, Mau-Chung

AU - Asbeck, P. M.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - A technique is presented which can significantly reduce the base-collector capacitance (Cbc) in AlGaAs/GaAs HBTs. Cbc is a key limiter of HBT microwave gain and bandwidth. The process uses high dose, high-energy ion implantation through the external base layer to compensate part of the heavily doped sub-collector. It also uses the more conventional self-aligned shallow implant to compensate the entire collector underneath the base contact. The total Cbc of the double implanted HBTs has been reduced more than 35% with this new technique as compared to devices with shallow implant only. Under proper conditions, the double implantation produces little damage to the base, thus the RF performance can be significantly improved. An fmax greater than 200 GHz has been obtained, comparable to the best previous reported results in common emitter HBTs.

AB - A technique is presented which can significantly reduce the base-collector capacitance (Cbc) in AlGaAs/GaAs HBTs. Cbc is a key limiter of HBT microwave gain and bandwidth. The process uses high dose, high-energy ion implantation through the external base layer to compensate part of the heavily doped sub-collector. It also uses the more conventional self-aligned shallow implant to compensate the entire collector underneath the base contact. The total Cbc of the double implanted HBTs has been reduced more than 35% with this new technique as compared to devices with shallow implant only. Under proper conditions, the double implantation produces little damage to the base, thus the RF performance can be significantly improved. An fmax greater than 200 GHz has been obtained, comparable to the best previous reported results in common emitter HBTs.

UR - http://www.scopus.com/inward/record.url?scp=0029510644&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029510644

SP - 86

EP - 87

Y2 - 19 June 1995 through 21 June 1995

ER -