Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing

D. K. Sengupta*, S. Kim, Hao-Chung Kuo, A. P. Curtis, K. C. Hsieh, S. G. Bishop, M. Feng, G. E. Stillman, S. D. Gunapala, S. V. Bandara, Y. C. Chang, H. C. Liu

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV at 900 °C has been measured and the value of the bandgap shift can be controlled by the anneal time. Theoretical modeling of the intermixing effect on the energy levels is performed based on the effective bond-orbital method, and we obtain a very good fit to the photoluminescence data. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in the responsivity characteristics.

Original languageEnglish
Pages (from-to)385-390
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume525
StatePublished - 1 Jan 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 13 Apr 199815 Apr 1998

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