Bandgap engineering of Si1-xGex epitaxial tunnel layer for tunnel FETs

Chen Yi-Ju, Bing-Yue Tsui

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of the Si1-xGex epitaxial tunnel layer (ETL) scheme and ETL thickness on the ON-state current (ION) of Si1-xGex ETL tunnel field-effect transistors (TFETs) are thoroughly studied in this work. Compared with using pure Ge as the ETL, implementing Si1-xGex with linearly changing Ge content degrades ION markedly, whereas using Si1-xGex with stepwise changing Ge content degrades ION slightly. Although changing the ETL material from Ge to Si1-xGex leads to ION reduction, for practical implementation, it is anticipated that a better subthreshold swing (SS) can be obtained by ETL crystal quality improvement. The best Si1-xGex ETL scheme for application in complementary Si1-xGex ETL TFETs is 4-nm-thick Si1-xGex with stepwise decreasing bandgap (Eg). It is believed that this structure is more promising for implementation.

Original languageEnglish
Article number084201
JournalJapanese Journal of Applied Physics
Volume57
Issue number8
DOIs
StatePublished - 1 Aug 2018

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