We report both experimental and theoretical studies on Si1-xGex/Si multiple quantum wells. A self-consistent calculation is employed to model the excitonic transition. It shows that, in the large conduction-band-offset region the Delta(2)-heavy-hole (hh) exciton is the lowest transition, while in the small-offset region the Delta(4)-hh exciton is the lower. From an analysis of the data, a type-II conduction-band-offset ratio of 30+/-3% is concluded.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 15 Aug 2000|
- SEMICONDUCTOR HETEROSTRUCTURES
- SI/SIGE HETEROSTRUCTURES
- EDGE PHOTOLUMINESCENCE
- GAP PHOTOLUMINESCENCE