Band-offset determination and excitons in SiGe/Si(001) quantum wells

HH Cheng*, ST Yen, RJ Nicholas

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We report both experimental and theoretical studies on Si1-xGex/Si multiple quantum wells. A self-consistent calculation is employed to model the excitonic transition. It shows that, in the large conduction-band-offset region the Delta(2)-heavy-hole (hh) exciton is the lowest transition, while in the small-offset region the Delta(4)-hh exciton is the lower. From an analysis of the data, a type-II conduction-band-offset ratio of 30+/-3% is concluded.

Original languageEnglish
Pages (from-to)4638-4641
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number7
DOIs
StatePublished - 15 Aug 2000

Keywords

  • SEMICONDUCTOR HETEROSTRUCTURES
  • SI/SIGE HETEROSTRUCTURES
  • EDGE PHOTOLUMINESCENCE
  • GAP PHOTOLUMINESCENCE
  • SILICON
  • SUPERLATTICES
  • ALIGNMENT
  • ENERGIES
  • ALLOYS

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