Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy

Shun Ming Sun, Wen Jun Liu, Yong Ping Wang, Ya Wei Huan, Qian Ma, Bao Zhu, Su Dong Wu, Wen Jie Yu, Ray-Hua Horng, Chang Tai Xia, Qing Qing Sun, Shi Jin Ding, David Wei Zhang

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The energy band alignment of the atomic-layer-deposited In2O3/β-Ga2O3 ( 2 ¯ 01) interface is evaluated by X-ray photoelectron spectroscopy. The X-ray diffraction pattern reveals that the In2O3 film grown at 160 °C is amorphous, while it becomes polycrystalline at a higher deposition temperature of 200 °C. The bandgaps, determined by reflection electron energy loss spectroscopy, are 4.65, 3.85, and 3.47 eV for β-Ga2O3, polycrystalline In2O3, and amorphous In2O3, respectively. Both amorphous and polycrystalline In2O3/β-Ga2O3 interfaces have Type I alignment. The conduction and valence band offsets at the polycrystalline (amorphous) In2O3/β-Ga2O3 interface are 0.35 and 0.45 eV (0.39 and 0.79 eV), respectively. These observations suggest that polycrystalline In2O3 as an intermediate semiconductor layer is beneficial to the barrier reduction of metal/Ga2O3 contact.

Original languageEnglish
Article number031603
JournalApplied Physics Letters
Issue number3
StatePublished - 16 Jul 2018

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