Ballistic transport in 0.05 μm-gate AlGaAs/GaAs MODFET

Tetsuzo Ueda*, Keijiro Itakura, Kazuo Miyatsuji, Tsuyoshi Tanaka, Daisuke Ueda, Chihiro Hamaguchi

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

We report for the first time an experimental evidence of ballistic transport in AlGaAs/GaAs MODFET with the gate length down to 0.05 μm. Based on the proposed modeling of the device, we have found that the carrier velocity of the device reaches 6.5×10 7 cm/s that is independent of temperature. This enhanced velocity is due to the high electric field under the gate, which is obtained by deep and narrow gate-recess process. The temperature-independency implies that the electrons are transported without suffering from optical phonon and/or inter-valley scattering.

Original languageEnglish
Pages762-764
Number of pages3
StatePublished - 1 Dec 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 26 Aug 199228 Aug 1992

Conference

ConferenceExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period26/08/9228/08/92

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