We report for the first time an experimental evidence of ballistic transport in AlGaAs/GaAs MODFET with the gate length down to 0.05 μm. Based on the proposed modeling of the device, we have found that the carrier velocity of the device reaches 6.5×10 7 cm/s that is independent of temperature. This enhanced velocity is due to the high electric field under the gate, which is obtained by deep and narrow gate-recess process. The temperature-independency implies that the electrons are transported without suffering from optical phonon and/or inter-valley scattering.
|Number of pages||3|
|State||Published - 1 Dec 1992|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 26 Aug 1992 → 28 Aug 1992
|Conference||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||26/08/92 → 28/08/92|