@inproceedings{a9712d49db444cc1b25ca00687dd5c7d,
title = "Balanced Noise Design of Dual-Band 2.4/5-GHz pHEMT LNAs",
abstract = "This paper presents dual-band 2.4/5-GHz dual-band pHEMT LNAs based on a balanced noise design approach using 0.15 μm pHEMT technology. A dual-band LNA has two input match frequencies without simultaneous noise match at these two frequencies especially when the extrinsic loss caused by the inductor is absent. Noise parameters as a function of frequencies for a dual-band FET LNA based on the balanced noise performance are developed. The fully integrated pHEMT LNA achieves power gain of 18 dB at 2.4 GHz and 12 dB at 5 GHz and noise figure about 3dB at 2.4 GHz and 5 GHz, respectively, at 12.6 mA and 3 V. The pHEMT LNA with a bondwire inductor at input match demonstrates a distinct balanced noise performance.",
keywords = "dual-band, FET, LNA, low-noise amplifier, noise parameters, pHEMT",
author = "Chin-Chun Meng and Chang, {Wei Ling} and Hsiao, {Yu Chih} and Li, {Meng Che} and Chien, {Hsin Yi} and Huang, {Guo Wei}",
year = "2020",
month = jan,
doi = "10.1109/RWS45077.2020.9050020",
language = "English",
series = "IEEE Radio and Wireless Symposium, RWS",
publisher = "IEEE Computer Society",
pages = "255--258",
booktitle = "RWW 2020 - 2020 IEEE Radio and Wireless Symposium",
address = "United States",
note = "null ; Conference date: 26-01-2020 Through 29-01-2020",
}