Backside-process-induced junction leakage and process improvement of Cu TSV based on Cu/Sn and BCB hybrid bonding

Yao Jen Chang*, Cheng Ta Ko, Tsung Han Yu, Cheng Hao Chiang, Kuan-Neng Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Wafer-level 3-D integration using Cu through-silicon vias (TSVs) and fine-pitch Cu/Sn-BCB hybrid bonding is investigated with electrical leakage current. With the well-fabricated Cu TSVs and Cu/Sn bond structures, the leakage current path in this scheme due to backside process was found, and the corresponding mechanism is discussed. The leakage current can be solved by the modified backside process. The improved 3-D integration scheme shows extremely low leakage current and no visible defects inside Cu TSV.

Original languageEnglish
Article number6417948
Pages (from-to)435-437
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number3
DOIs
StatePublished - 29 Jan 2013

Keywords

  • 3-D integration
  • Hybrid bonding
  • leakage current
  • through-silicon via (TSV)

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