Background and photoexcited carrier dependence of terahertz radiation from Mg-doped nonpolar indium nitride films

Hyeyoung Ahn*, Yi Jou Yeh, Yu Liang Hong, Shangjr Gwo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report terahertz (THz) generation from Mg-doped nonpolar (a-plane) InN (a-InN:Mg). While the amplitude and polarity of the THz field from Mg-doped polar (c-plane) InN depend on the background carrier density, the p-polarized THz field from a-InN:Mg has background carrier in sensitive intensity and polarity, which can be attributed to carrier transport in a polarization-induced in-plane electric field. A small but apparent azimuthal angle dependence of the THz field from a-InN:Mg shows the additional contribution of the second-order nonlinear optical effect. Meanwhile, in this study, we did not observe the contribution of the intrinsic in-plane electric field which is significant for high stacking fault density nonpolar InN.

Original languageEnglish
Article number122105
JournalApplied Physics Express
Volume3
Issue number12
DOIs
StatePublished - 1 Dec 2010

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