Back to the Future: Germanium nanoengineering reemerges as the savior of Si functional devices

Pei-Wen Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Since the inception of the first transistors in 1940s, the immense body of work on the Group IV semiconductors Si and Ge has spearheaded spectacular advances in solid-state electronics development culminating in the modern integrated-circuit (IC) technology that has enabled a vast landscape of device applications in logic, memory, and computing. Although initially Si supplanted Ge as the material of choice for MOSFETs, more recently Ge-based devices are breaking new ground for widespread and innovative applications in electronics, photonics, communications, and sensing devices. Si and Ge, their alloys (Si x Ge 1-x ) have numerous applications in CMOS technologies that are applicable for low-cost and high-density ICs, as well as for high-speed electronics and cost-effective photonics through bandgap and strain engineering. We have successfully developed a CMOS-compatible fabrication approach to create new classes of exciting photonic (light emitter and photoMOSFETs) and electronic (single-electron transistors (SETs)) devices. We sincerely believe that our discoveries and developments on the exquisite Ge electronic and photonic devices have only scratched the tip of the iceberg in terms of the exciting device possibilities for electronic and photonic integrated circuits (EPICs) on Si platforms.

Original languageEnglish
Title of host publication2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
EditorsTing-Ao Tang, Fan Ye, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538644409
DOIs
StatePublished - 5 Dec 2018
Event14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
Duration: 31 Oct 20183 Nov 2018

Publication series

Name2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Conference

Conference14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
CountryChina
CityQingdao
Period31/10/183/11/18

Fingerprint Dive into the research topics of 'Back to the Future: Germanium nanoengineering reemerges as the savior of Si functional devices'. Together they form a unique fingerprint.

Cite this