Back-end of line compatible transistors for hybrid CMOS applications

Po-Tsun Liu*, Po Yi Kuo, Chien Min Chang, Hsiu Hsuan Wei, Shih Tse Wu, Eric Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The low-temperature back-end of line (BEOL) compatible transparent amorphous oxide semiconductor (TAOS) TFTs and poly-Si TFTs are the suitable technology platform for three-dimensional (3D) integration hybrid CMOS technologies. The n-channel amorphous indium tungsten oxide (a-IWO) ultra-thin-film transistors (UTFTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO UTFTs with low operation voltages exhibit good electrical characteristics: near ideal subthreshold swing (S.S.) ~ 63mV/dec., high field-effect mobility (FE) ~ 25.3 cm2/V-s. In addition, we also have fabricated the p-channel poly-Si TFTs with high-κ gate insulator (GI). The matched electrical characteristics of n-channel and p-channel devices with low operation voltage and low IOFF are exhibiting the promising candidate for future hybrid CMOS applications.

Original languageEnglish
Title of host publication2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
EditorsYue Kuo
PublisherElectrochemical Society Inc.
Pages135-138
Number of pages4
Edition1
ISBN (Electronic)9781607685395
DOIs
StatePublished - 1 Jan 2019
Event7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 - Kyoto, Japan
Duration: 19 May 201923 May 2019

Publication series

NameECS Transactions
Number1
Volume90
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
CountryJapan
CityKyoto
Period19/05/1923/05/19

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