The thin-film transistors (TFTs) with back-channel etched (BCE) type enable channel length to be narrow and reduce parasitic capacitances owing to its shorter overlaps between the gate and source/drain (S/D) electrodes. In this study, a high-performance BCE-type oxide thin-film transistor was proposed for investigation. A novel stacked double layer ln-W-0 (IWO)/In-W-Zn-0 (1WZO) channel structure was fabricated and developed. Respectively, IWZO exhibits a high resistance to back-channel etching damage and IWO channel achieve a high mobility. The double layer IWO/1WZO TFTs are promising candidates for driving active matrix organic light-emitting diode (AMOLED) and high resolution display applications in the future. The double layer IWO/IWZO TFTs with S/D pattern by H2O2 + KOH can exhibit the high-performance electrical characteristic. The field-effect mobility (pre)-21.1cm2/V-s. Subthreshold swing (S.S.)-0.15 V/dec, threshold voltage (Vth) ∼-0.092 V, and on/off ratio-4.88xl08 can be achieved.