Auto-correlation function analysis of crystallization in amorphous SiGe thin films

T. F. Chiang, Wen-Wei Wu, S. L. Cheng, H. H. Lin, S. W. Lee, L. J. Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300-350 °C then increases in samples annealed at 400-450 °C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.

Original languageEnglish
Pages (from-to)339-343
Number of pages5
JournalApplied Surface Science
Volume212-213
Issue numberSPEC.
DOIs
StatePublished - 15 May 2003

Keywords

  • Amorphous
  • Auto-correlation function
  • Crystallization
  • Si
  • SiGe

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