Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier

Chun Yi Chai*, Jung A. Huang, Yong Lin Lai, Janne Wha Wu, Chun Yen Chang, Yi Jen Chan, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The influences of the As-outdiffusion and Au-indiffusion on the performances of the Au/Ge/Pd/n-GaAs ohmic metallization systems are clarified by investigating three different types of barrier metal structures Au/Ge/Pd/GaAs, Au/Ti/Ge/Pd/GaAs, and Au/Mo/Ti/Ge/Pd/GaAs. The results indicate that As-outdiffusion leads to higher specific contact resistivity, whereas Au-indiffusion contributes to the turnaround of the contact resistivity at even higher annealing temperature. For Au/Mo/Ti/Ge/Pd/n-GaAs samples, they exhibit the smoothest surface and the lowest specific contact resistivity with the widest available annealing temperature range. Moreover, Auger electron spectroscopy depth profiles show that the existing Ti oxide for the Mo/Ti bilayer can very effectively retard Au-indiffusion, reflecting the onset of the turnaround point at much higher annealing temperature.

Original languageEnglish
Pages (from-to)1818-1822
Number of pages5
JournalJournal of Electronic Materials
Volume25
Issue number12
DOIs
StatePublished - 1 Jan 1996

Keywords

  • Au/Mo/Ti/Ge/Pd metallization
  • n-type GaAs
  • Ohmic contact

Fingerprint Dive into the research topics of 'Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier'. Together they form a unique fingerprint.

  • Cite this

    Chai, C. Y., Huang, J. A., Lai, Y. L., Wu, J. W., Chang, C. Y., Chan, Y. J., & Cheng, H-C. (1996). Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrier. Journal of Electronic Materials, 25(12), 1818-1822. https://doi.org/10.1007/BF02657159