AuBe Ohmic contacts to p-type ZnTe

W. H. Lan*, W. J. Lin, Yi Cheng Cheng, K. Tai, C. M. Tasi, P. H. Wu, K. H. Cheng, S. T. Chou, C. M. Yang, Yi Chang Cheng, Kai-Feng Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 × 10-6Ωcm2 for a p-doping level of 1.6 × 1019cm-3 and at an annealing temperature of 200°C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe.

Original languageEnglish
Pages (from-to)2434-2435
Number of pages2
JournalElectronics Letters
Volume34
Issue number25
DOIs
StatePublished - 10 Dec 1998

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