Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications

Ting En Hsieh, Yueh Chin Lin, Chung Ming Chu, Yu Lin Chuang, Yu Xiang Huang, Wang Cheng Shi, Chang Fu Dee, Burhanuddin Yeop Majlis, Wei-I Lee, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WNX Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

Original languageEnglish
Pages (from-to)3285-3289
Number of pages5
JournalJournal of Electronic Materials
Issue number7
StatePublished - 1 Jul 2016


  • Au-free
  • GaN HEMT
  • Schottky barrier height
  • WN metal
  • high-voltage stress

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