Atomically resolved mapping of polarization and electric fields across ferroelectric/oxide interfaces by z-contrast imaging

Hye Jung Chang, Sergei V. Kalinin, Anna N. Morozovska, Mark Huijben, Ying-hao Chu, Pu Yu, Ramamoorthy Ramesh, Evgeny A. Eliseev, George S. Svechnikov, Stephen J. Pennycook, Albina Y. Borisevich

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64 Scopus citations

Abstract

Direct atomic displacement mapping at ferroelectric interfaces by aberration corrected scanning transmission electron microscopy(STEM) (a STEM image, b corresponding displacement profile) is combined with Landau Ginsburg Devonshire theory to obtain the complete interface electrostatics in real space, including separate estimates for the polarization and intrinsic interface charge contributions.

Original languageEnglish
Pages (from-to)2474-2479
Number of pages6
JournalAdvanced Materials
Volume23
Issue number21
DOIs
StatePublished - 3 Jun 2011

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    Chang, H. J., Kalinin, S. V., Morozovska, A. N., Huijben, M., Chu, Y., Yu, P., Ramesh, R., Eliseev, E. A., Svechnikov, G. S., Pennycook, S. J., & Borisevich, A. Y. (2011). Atomically resolved mapping of polarization and electric fields across ferroelectric/oxide interfaces by z-contrast imaging. Advanced Materials, 23(21), 2474-2479. https://doi.org/10.1002/adma.201004641