Atomically resolved interface structure between epitaxial TiN film and MgO substrate

Lin Lung Wei*, Tzu Chun Yen, Hien Do, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


In this study, we used a high quality epitaxial TiN thin film grown on MgO (001) substrate for the investigation of the TiN/MgO interface structure which was characterized with scanning transmission electron microscopy (STEM) at atomic resolution. Analyses of high angle annular dark-field and annular bright-field STEM image contrast with X-ray energy dispersive spectroscopy maps show that a 2 ~ 4 nm diffuse interlayer of mixed compositions exists coherently between TiN and MgO with the same structure and across the interface the ionic bonding sequences are maintained without any interruption.

Original languageEnglish
Pages (from-to)8-12
Number of pages5
JournalThin Solid Films
StatePublished - 1 Nov 2016


  • Epitaxial
  • Interface
  • Scanning transmission electron microscopy

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