Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Bo Chao Huang; Pu Yu; Ying-hao Chu; Chia Seng Chang; Ramamoorthy Ramesh; Rafal E. Dunin-Borkowski; Philipp Ebert; Ya Ping Chiu

doi:10.1021/acsnano.7b06004

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Bo Chao Huang, Pu Yu^*, Ying-hao Chu, Chia Seng Chang, Ramamoorthy Ramesh, Rafal E. Dunin-Borkowski, Philipp Ebert, Ya Ping Chiu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO ₃ /La _0.7 Sr _0.3 MnO ₃ interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

Original language	English
Pages (from-to)	1089-1095
Number of pages	7
Journal	ACS Nano
Volume	12
Issue number	2
DOIs	https://doi.org/10.1021/acsnano.7b06004
State	Published - 27 Feb 2018

Keywords

atomically resolved electronic states
BiFeO
complex oxide heterointerfaces
cross-sectional scanning tunneling microscopy
La Sr MnO

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10.1021/acsnano.7b06004

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@article{80e455bd78844ff2a71d050b96cc89b2,

title = "Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces",

abstract = " We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO 3 /La 0.7 Sr 0.3 MnO 3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides. ",

keywords = "atomically resolved electronic states, BiFeO, complex oxide heterointerfaces, cross-sectional scanning tunneling microscopy, La Sr MnO",

author = "Huang, {Bo Chao} and Pu Yu and Ying-hao Chu and Chang, {Chia Seng} and Ramamoorthy Ramesh and Dunin-Borkowski, {Rafal E.} and Philipp Ebert and Chiu, {Ya Ping}",

year = "2018",

month = feb,

day = "27",

doi = "10.1021/acsnano.7b06004",

language = "English",

volume = "12",

pages = "1089--1095",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "2",

}

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces. / Huang, Bo Chao; Yu, Pu; Chu, Ying-hao; Chang, Chia Seng; Ramesh, Ramamoorthy; Dunin-Borkowski, Rafal E.; Ebert, Philipp; Chiu, Ya Ping.

In: ACS Nano, Vol. 12, No. 2, 27.02.2018, p. 1089-1095.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

AU - Huang, Bo Chao

AU - Yu, Pu

AU - Chu, Ying-hao

AU - Chang, Chia Seng

AU - Ramesh, Ramamoorthy

AU - Dunin-Borkowski, Rafal E.

AU - Ebert, Philipp

AU - Chiu, Ya Ping

PY - 2018/2/27

Y1 - 2018/2/27

N2 - We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO 3 /La 0.7 Sr 0.3 MnO 3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

AB - We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO 3 /La 0.7 Sr 0.3 MnO 3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

KW - atomically resolved electronic states

KW - BiFeO

KW - complex oxide heterointerfaces

KW - cross-sectional scanning tunneling microscopy

KW - La Sr MnO

UR - http://www.scopus.com/inward/record.url?scp=85042719252&partnerID=8YFLogxK

U2 - 10.1021/acsnano.7b06004

DO - 10.1021/acsnano.7b06004

M3 - Article

C2 - 29384356

AN - SCOPUS:85042719252

VL - 12

SP - 1089

EP - 1095

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 2

ER -

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

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Keywords

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