Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Bo Chao Huang, Pu Yu*, Ying-hao Chu, Chia Seng Chang, Ramamoorthy Ramesh, Rafal E. Dunin-Borkowski, Philipp Ebert, Ya Ping Chiu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO 3 /La 0.7 Sr 0.3 MnO 3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

Original languageEnglish
Pages (from-to)1089-1095
Number of pages7
JournalACS Nano
Volume12
Issue number2
DOIs
StatePublished - 27 Feb 2018

Keywords

  • atomically resolved electronic states
  • BiFeO
  • complex oxide heterointerfaces
  • cross-sectional scanning tunneling microscopy
  • La Sr MnO

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