Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La 2 O 3 /Si(1 0 0) interfacial transition layer

H. Nohira*, T. Shiraishi, K. Takahashi, T. Hattori, I. Kashiwagi, C. Ohshima, S. Ohmi, H. Iwai, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

25 Scopus citations

Abstract

The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La 2 O 3 /Si(100) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra.

Original languageEnglish
Pages (from-to)493-496
Number of pages4
JournalApplied Surface Science
Volume234
Issue number1-4
DOIs
StatePublished - 15 Jul 2004
EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
Duration: 15 Sep 200319 Sep 2003

Keywords

  • Angle-resolved photoelectron spectroscopy
  • Depth profiling
  • Electronic band structure
  • High-κ dielectrics
  • La O
  • Rutherford back scattering

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