Atomic motion of dopant during interfacial silicide formation

M. Wittmer*, C. Y. Ting, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides.

Original languageEnglish
Pages (from-to)191-195
Number of pages5
JournalThin Solid Films
Volume104
Issue number1-2
DOIs
StatePublished - 17 Jun 1983

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