Atomic intermixing and electronic interaction at the Pd-Si(111) interface

O. Bisi*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

We present a theoretical study of electronic properties of the Pd-Si(111) interface in the early stages of interaction. Three models are considered: a chemisorbed Pd layer on Si, an epitaxial Pd2Si layer on Si, and a near-surface Si layer containing interstitial Pd atoms. By comparing the results of our calculations with the spectroscopic data, we find that the model of mixing interstitial Pd atoms in Si is the most appropriate one. This suggests an interpretation of the interfacial reaction in terms of a precursor state of formation of Pd silicide.

Original languageEnglish
Pages (from-to)1633-1636
Number of pages4
JournalPhysical Review Letters
Volume52
Issue number18
DOIs
StatePublished - 1 Jan 1984

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