Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress

C. N. Liao*, C. Chen, J. S. Huang, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

With continuing scaling down in microelectronic devices, the current density and the power consumption in the devices must increase. Hence, device reliability under high current density is an issue for ultralarge-scale integration technology. This study investigates the heating behavior of the heavily doped Si channels under high current stress. Thermal and electrical characterization of the channels in bulk Si and in silicon-on-insulator were conducted. An abnormal asymmetrical heating along the channels in bulk Si has been observed. We propose a junction leakage mechanism to explain the phenomenon observed. Other asymmetrical thermal effects, such as electron-hole recombination and Peltier effect, have also been discussed.

Original languageEnglish
Pages (from-to)6895-6901
Number of pages7
JournalJournal of Applied Physics
Volume86
Issue number12
DOIs
StatePublished - 15 Dec 1999

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