Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

Artur Useinov*, C. Gooneratne, J. Kosel

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers.

Original languageEnglish
Title of host publicationMagnetism and Magnetic Materials V
PublisherTrans Tech Publications Ltd
Pages145-148
Number of pages4
ISBN (Print)9783037854365
DOIs
StatePublished - 1 Jan 2012
Event5th Moscow International Symposium on Magnetism, MISM 2011 - Moscow, Russian Federation
Duration: 21 Aug 201125 Aug 2011

Publication series

NameSolid State Phenomena
Volume190
ISSN (Print)1012-0394

Conference

Conference5th Moscow International Symposium on Magnetism, MISM 2011
CountryRussian Federation
CityMoscow
Period21/08/1125/08/11

Keywords

  • Magnetic tunnel junction
  • Spin polarized transport
  • Tunnel magnetoresistance

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