Asymmetric low temperature bonding structure using ultra-thin buffer layer technique for 3D integration

Hao Wen Liang, Ting Yang Yu, Yao Jen Chang, Kuan-Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Wafer-level Sn/In-Cu bonding structure with Ni ultra-thin buffer layer is investigated to achieve a reduction in solder thickness, bonding temperature and duration. Furthermore, the asymmetric bonding structure is able to separate the manufacturing process of solder and electrical isolation layer. It is a promising approach for the application on hybrid bonding of three-dimensional integration.

Original languageEnglish
Title of host publicationProceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages312-315
Number of pages4
ISBN (Electronic)9781467382588
DOIs
StatePublished - 9 Sep 2016
Event23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 - Singapore, Singapore
Duration: 18 Jul 201621 Jul 2016

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2016-September

Conference

Conference23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
CountrySingapore
CitySingapore
Period18/07/1621/07/16

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  • Cite this

    Liang, H. W., Yu, T. Y., Chang, Y. J., & Chen, K-N. (2016). Asymmetric low temperature bonding structure using ultra-thin buffer layer technique for 3D integration. In Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 (pp. 312-315). [7564307] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2016.7564307