Asymmetric Low Metal Contamination Ni-Induced Lateral Crystallization Polycrystalline-Silicon Thin-Film Transistors with Low OFF-State Currents for Back-End of Line (BEOL) Compatible Devices Applications

Po Yi Kuo*, Shao Chi Lo, Hsiu Hsuan Wei, Po Tsun Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with asymmetric low metal contamination Ni-induced lateral crystallization (LC-NILC) poly-Si channel and high- $\kappa $ HfO2 gate insulator (GI) have been successfully fabricated and demonstrated for the first time. The amounts of Ni diffused into the poly-Si film can be effectively reduced by Ni removal processes prior to NILC. The asymmetric LC-NILC poly-Si TFTs exhibit higher field-effect mobility ( $\mu _{\mathrm{ FE}}$ ), steeper ideal subthreshold swing (S.S.), larger ON/OFF currents ratio ( $\text{I}_{\mathrm{ ON}}/\text{I}_{\mathrm{ OFF}}$ ), better uniformity, and improved C-V curves compared to traditional NILC (T-NILC) poly-Si TFTs owing to better crystallization quality and less low metal contamination. These remarkable device characteristics and the matched complementary TFTs (C-TFTs) electrical characteristics with low $\text{I}_{\mathrm{ OFF}}$ and low operation voltages make the asymmetric LC-NILC poly-Si TFTs promising for the future back-end of line (BEOL) compatible devices applications in monolithic three-dimension integrated circuits (3D-ICs).

Original languageEnglish
Article number9223692
Pages (from-to)1317-1322
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume8
DOIs
StatePublished - 2020

Keywords

  • backend of line (BEOL)
  • complementary TFTs (C-TFTs)
  • HfO₂ gate insulator (GI)
  • High-κ
  • low metal contamination (LC)
  • monolithic three-dimension integrated circuits (3D-ICs)
  • Ni-induced lateral crystallization (NILC)
  • poly-Si thin-film transistors (poly-Si TFTs)

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