Asymmetric carrier conduction mechanism by tip electric field in WSiO X resistance switching device

Yong En Syu*, Ting Chang Chang, Tsung Ming Tsai, Geng Wei Chang, Kuan Chang Chang, Jyun Hao Lou, Ya-Hsiang Tai, Ming Jinn Tsai, Ying Lang Wang, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiO X/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.

Original languageEnglish
Article number6151005
Pages (from-to)342-344
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number3
DOIs
StatePublished - 1 Mar 2012

Keywords

  • Nonvolatile memory
  • resistance switching
  • tip electric field
  • tungsten silicide (WSi)

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    Syu, Y. E., Chang, T. C., Tsai, T. M., Chang, G. W., Chang, K. C., Lou, J. H., Tai, Y-H., Tsai, M. J., Wang, Y. L., & Sze, S. M. (2012). Asymmetric carrier conduction mechanism by tip electric field in WSiO X resistance switching device. IEEE Electron Device Letters, 33(3), 342-344. [6151005]. https://doi.org/10.1109/LED.2011.2182600