Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices

Howard Chih Hao Wang*, Chih Chiang Wang, Carlos H. Diaz, Boon Khim Liew, Jack Yuan Chen Sun, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Optimization of a LDD doping profile to enhance hot carrier resistance in 3.3 V input/output CMOS devices has been performed by utilizing phosphorus transient enhanced diffusion (TED). Hot carrier effects in hybrid arsenic/phosphorus LDD nMOSFET's with and without TED are characterized comprehensively. Our result shows that the substrate current in a nMOSFET with phosphorus TED can be substantially reduced, as compared to the one without TED. The reason is that the TED effect can yield a more graded n - LDD doping profile and thus a smaller lateral electric field. Further improvement of hot carrier reliability can be achieved by optimizing arsenic implant energy. Secondary ion mass spectrometry analysis for TED effect and two-dimensional (2-D) device simulation for electric field and current flow distributions have been conducted. The phosphorus TED effects on transistor driving current and off-state leakage current are also investigated.

Original languageEnglish
Pages (from-to)67-71
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume49
Issue number1
DOIs
StatePublished - 1 Jan 2002

Keywords

  • Hot carriers
  • MOS devices
  • Transient enhanced diffusion

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