Arsenic-implanted HfON charge-trapping flash memory with large memory window and good retention

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Abstract

We have fabricated the TaN-[SiO2-LaAlO3]- HfONLaAlO3-SiO2 Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 °C, and a 5.5-V endurance window at 10-6 cycles were measured under very fast 100- μs and low 16-V program/erase. These excellent results were achieved using an As+ implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.

Original languageEnglish
Article number5699333
Pages (from-to)381-383
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number3
DOIs
StatePublished - 1 Mar 2011

Keywords

  • Charge-trapping Flash (CTF)
  • HfON
  • ion implant
  • nonvolatile memory (NVM)

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