Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

Shi Hao Guol*, H. W. Huang, C. S. Lin, J. K. Sheu, C. J. Tin, Cheng-Huang Kuo, Jin Wei Shi

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of InxGa 1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

Original languageEnglish
Article number721629
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7216
DOIs
StatePublished - 5 May 2009
EventGallium Nitride Materials and Devices IV - San Jose, CA, United States
Duration: 26 Jan 200929 Jan 2009

Keywords

  • Gallium nitride
  • Light emitting diode

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