Area-efficient and low-leakage diode string for On-Chip ESD protection

Chun Yu Lin, Po Han Wu, Ming-Dou Ker

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Diode string was used as the effective on-chip electrostatic discharge (ESD) protection device. To reduce the leakage current and the layout area, an area-efficient and lowleakage diode string is proposed in this paper. The standard steps of P- implantation and silicide blocking in CMOS process are used in this design to realize the proposed diode string with stacked P-/N+ diodes. The test devices of the proposed design have successfully been verified in the silicon chip. With the high ESD robustness, low leakage current, and small layout area, the proposed diode string can be a better solution for on-chip ESD protection applications.

Original languageEnglish
Article number7353163
Pages (from-to)531-536
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume63
Issue number2
DOIs
StatePublished - 1 Feb 2016

Keywords

  • Diode
  • Diode string
  • Electrostatic discharge (ESD)
  • Leakage

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