AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

H. Nohira*, A. Komatsu, K. Yamashita, K. Kakushima, H. Iwai, K. Sawano, Y. Shiraki

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Hard X-ray photoemission spectroscopy experiments are attractive because they can probe more deeply. The paper reviews two topics on the non-destructive characterization of high-κ/high-μ gate stacks using hard X-ray (hν = 7.94 keV) photoemission spectroscopy. The first topic is the change in the compositional depth profiles and the chemical bonding states of HfO 2/Si-cap/strained-Ge/Si0.5Ge0.5/Si(1 0 0) laminating structures. The second topic is the influence of various surface treatments (HF, (NH4)2S and HMDS treatments) and La 2O3 interlayer insertion on the chemical bonding states at high-κ/In0.53Ga0.47As interface.

Original languageEnglish
Pages (from-to)295-301
Number of pages7
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume190
Issue numberPART B
DOIs
StatePublished - Oct 2013

Keywords

  • High-κ
  • Interface
  • Photoelectron spectroscopy
  • Semiconductor

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