Approaches to enhance the performance of SiGe imagers operating near 130 GHz and 300 GHz

Jae Sung Rieh, Dae Keun Yoon, Jongwon Yun, Kiryong Song, Jungsoo Kim, Sooyeon Kim, Junghwan Yoo, Mehmet Kaynak, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A comparison is made on high-frequency SiGe imagers to investigate the performance enhancement with circuit-level approaches: employing a front-end low noise amplifier (LNA) and employing heterodyne topology. Two imagers operating near 130 GHz, one with and the other without an LNA, were compared for the responsivity and the noise equivalent power (NEP). Also, two imagers operating near 300 GHz, one in direct and the other in heterodyne topology, were compared for the same parameters. Inserting a front-end LNA has led to changes in the peak responsivity and the minimum NEP with a factor of 63.5 and 0.011, respectively, near 130 GHz. Employing heterodyne topology for the 300 GHz imager resulted in changes with a factor of 52.8 and 0.18 for the same parameters.

Original languageEnglish
Title of host publicationRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509012350
DOIs
StatePublished - 27 Sep 2016
Event2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan
Duration: 24 Aug 201626 Aug 2016

Publication series

NameRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

Conference

Conference2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
CountryTaiwan
CityTaipei
Period24/08/1626/08/16

Keywords

  • heterojunction bipolar transistors
  • imaging
  • receivers
  • silicon germanium
  • terahertz

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