Approaches and options for modeling sub-0.1 μm CMOS devices

Mansun Chan, Xuemei Xi, Jin He, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper attempts to provide a general guideline to develop a practical model for MOSFETs in the sub 0,1 μm generations. It starts by giving an overview of the different modeling approaches and options including charge based approach, surface potential based approach, and conductance based approach. Their relative advantages and weaknesses will be discussed. The evolution of the BSIM models from its first generation to the most recent release will be used as an example for the development of a practical device model. It will be followed by a discussion on how the accelerated technology development may impact the traditional modeling approaches. A new paradigm to incorporate modem software engineering methodology to shorten model development cycle will be presented.

Original languageEnglish
Title of host publicationProceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages79-82
Number of pages4
ISBN (Electronic)0780374290
DOIs
StatePublished - 1 Jan 2002
Event9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 - Hong Kong, China
Duration: 22 Jun 2002 → …

Publication series

NameProceedings of the IEEE Hong Kong Electron Devices Meeting
Volume2002-January

Conference

Conference9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
CountryChina
CityHong Kong
Period22/06/02 → …

Keywords

  • Acceleration
  • CMOS technology
  • Circuit simulation
  • Electronic mail
  • Guidelines
  • Helium
  • MOSFETs
  • Modems
  • Semiconductor device modeling
  • Software engineering

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