Applications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arrays

Jui Yuan Chen, Min Ci Wu, Yi Hsin Ting, Wei Che Lee, Ping Hung Yeh, Wen-Wei Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/p-n ZnO NWs/Ta2O5/Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5 G with AI in near future applications.

Original languageEnglish
Pages (from-to)439-444
Number of pages6
JournalScripta Materialia
Volume187
DOIs
StatePublished - Oct 2020

Keywords

  • Diode
  • Homojunction
  • Nanowires
  • RRAM
  • ZnO

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