Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD

Ta Shan Chang, Ting Chang Chang*, Po-Tsun Liu, C. Y. Chiang, S. C. Chen, Feng Sheng Yeh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

In this study a low-k material, methyl-silsesquiazane (MSZ) has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays. Compared with the conventional nitride film (k ∼ 7), the MSZ passivation layer exhibits a low residual stress and low dielectric constant (k ∼ 2.6) which lowers the RC delay in a device. The high transmittance and good planarization characteristics of a low-k MSZ film enhance the brightness and aperture ratio of thin-film transistors liquid crystal displays (TFT-LCDs).

Original languageEnglish
Pages (from-to)1117-1120
Number of pages4
JournalThin Solid Films
Volume515
Issue number3
DOIs
StatePublished - 23 Nov 2006

Keywords

  • Low-k
  • MSZ
  • Passivation layer
  • TFTs

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