Application of supercritical C O2 fluid for dielectric improvement of Si Ox film

Chih Tsung Tsai, Ting Chang Chang*, Po-Tsun Liu, Yi Li Cheng, Kon Tsu Kin, Fon Shan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

In this paper the supercritical carbon dioxide (SCC O2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (Si Ox) film at 150°C. After the treatment of SCC O2 fluid mixed with ethyl alcohol and pure H2 O, the oxygen content of Si Ox film increases and the traps within Si Ox are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10-2 to 3× 10-8 A cm2 at an electric field of 3 MVcm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number2
DOIs
StatePublished - 1 Jan 2009

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