Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors

Li Wei Feng, Ting Chang Chang*, Po-Tsun Liu, Chun Hao Tu, Yung Chun Wu, Che Yu Yang, Chun-Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The novel process of self-aligned fluorine doped oxide (SiOF) spacers on low temperature poly-Si (LTPS) lightly doped drain (LDD) thin film transistors (TFTs) is proposed. A fluorine doped oxide spacers were provided to generate the lower dissociation Si-F bonds adjusted to the interface of the drain which is the largest lateral electric field region for lightly doped drain structure. The stronger Si-F bonds can reduce the bonds broken by impact ionization. It is found that the output characteristics of SiOF spacers TFTs show the superior immunity to kink effect. The degradations in Vth shifting, subthreshold slope, drain current and transconductance of SiOF spacers after DC stress are improved.

Original languageEnglish
Pages (from-to)1204-1208
Number of pages5
JournalThin Solid Films
Volume517
Issue number3
DOIs
StatePublished - 1 Dec 2008

Keywords

  • Direct current (DC) stress
  • Fluorine doped oxide (SiOF)
  • Lightly doped drain (LDD)
  • Poly-Si
  • Thin film transistor (TFT)

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