A novel Schottky barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) device was proposed and demonstrated. The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Excellent ambipolar performance with a near-ideal sub-threshold slope (∼ 60 mV/decade) and high on-/off-state current ratio (comparable to or higher than 10 9 ) is realized, for the first time, on a single device. These encouraging results suggest that the new device may be suitable for some niche applications requiring simple and low-temperature processing of complementary metal-oxide-semiconductor (CMOS)-like devices.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||6 A|
|State||Published - 1 Jun 2002|
- Electrical junction
- Schottky barrier
- Silicon-on-insulator (SOI)