Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor

Horng-Chih Lin*, Meng Fan Wang, Fu Ju Hou, Jan Tsai Liu, Tiao Yuan Huang, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalLetter

12 Scopus citations

Abstract

A novel Schottky barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) device was proposed and demonstrated. The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Excellent ambipolar performance with a near-ideal sub-threshold slope (∼ 60 mV/decade) and high on-/off-state current ratio (comparable to or higher than 10 9 ) is realized, for the first time, on a single device. These encouraging results suggest that the new device may be suitable for some niche applications requiring simple and low-temperature processing of complementary metal-oxide-semiconductor (CMOS)-like devices.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number6 A
StatePublished - 1 Jun 2002

Keywords

  • Ambipolar
  • Electrical junction
  • Schottky barrier
  • Silicide
  • Silicon-on-insulator (SOI)

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