Application of direct-tunneling gate oxides to high-performance CMOS

Hisayo Sasaki Momose*, Shin Ichi Nakamura, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The characteristics of direct-tunneling gate oxide metal-oxide semiconductor field effect transistor (MOSFET)s are described. The effect of gate leakage current on MOSFET characteristics drops off as the gate length is reduced. Extremely good DC and AC performance has been realized using ultra-thin oxides down to 1.5 nm. Improved hot-carrier reliability and high oxide breakdown voltage have also been observed.

Original languageEnglish
Pages (from-to)1413-1423
Number of pages11
JournalMicroelectronics Reliability
Volume38
Issue number9
DOIs
StatePublished - 1998

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