Application of block diagonal technique to a Hamiltonian matrix in performing spin-splitting calculations for GaN wurtzite materials

Chun Nan Chen*, Sheng Hsiung Chang, Wei Long Su, Wan Tsang Wang, Hsiu Fen Kao, Jen Yi Jen, Yiming Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The bulk inversion asymmetry (Dresselhaus) terms (i. e., B 2, B 1, and B′ 1 terms) of wurtzite materials are determined. The 2 × 2 conduction band, 2 × 2 heavy-hole band, 2 × 2 light-hole band, and 2 × 2 crystal-field split-off hole band matrices of wurtzite semiconductors are developed and decoupled by using a block diagonal technique. Importantly, those 2 × 2 block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction and the valence band spin-splitting parameters and energies of GaN wurtzite materials are formulated by solving the block diagonal matrices. The presence of these terms is shown to include the spin-splitting phenomenon.

Original languageEnglish
Pages (from-to)403-409
Number of pages7
JournalJournal of the Korean Physical Society
Volume60
Issue number3
DOIs
StatePublished - Feb 2012

Keywords

  • Dresselhaus
  • GaN
  • Inversion asymmetry
  • Spin splitting
  • Wurtzite

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