We propose a novel process whereby Antimony Assisted Arsenic Source/Drain Extension (A3 SDE) is employed to realize a steep and retrograde indium pocket profile for sub-0.1μm nMOSFETs. By engineering the defect distributions in the amorphous layer created by indium implant, this new process improves 8% current drive while maintaining the same Ioff. It reduces nMOS diode leakage by two orders of magnitude and sidewall junction capacitance near the gate by 14%. Reliability assessment of devices fabricated by the A3 SDE process reveals significant improvement in hot carrier effects and no observable degradation of gate oxide integrity.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2001|
|Event||IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States|
Duration: 2 Dec 2001 → 5 Dec 2001