Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etching

Tzong Kuei Kang*, Shih Yuan Ueng, Bau Tong Dai, Liang Po Chen, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The nonuniformity of the induced leakage current in metal oxide semiconductor (MOS) capacitors has been investigated in an electron cyclotron resonance (ECR) system. For plasma-etched MOS capacitors with 5-nm-thick oxides, it is found that the leakage currents induced by plasma etching increase with increasing overetching time. However, additional Ebd (breakdown field) degradation is not obvious as overetching percentage increases from 10% to 50%. A mechanism based on the antenna charging effect has been proposed to explain the Ebd electrical characteristics. In accordance with the mechanism, the Ebd degradation has been significantly reduced by first etching off a narrow peripheral edge around the gate pattern.

Original languageEnglish
Pages (from-to)578-583
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 PART A
DOIs
StatePublished - 1 Feb 1996

Keywords

  • Antenna charging effect
  • E degradation
  • ECR system
  • MOS capacitors

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