Anomalous selective tungsten growth by chemical vapor deposition

Yu Jane Mei*, Ting Chang Chang, Jeng Dong Sheu, Wen Kuan Yeh, Fu-Ming Pan, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

Selective tungsten chemical vapor deposition (W-CVD) is one of the most attractive technique for filling deep submicron contact hole and via hole for the ULSI application. In this work, we firstly find out the anomalous selective W growth for the contact hole. The tungsten only nucleates from the side ring of the contact hole bottom. Several predeposition treatments prior to W growth can improve this anomalous feature and excellently selective W growth can be achieved. Auger electron spectroscopy (AES) is utilized to investigate the interface of Si/W. A model has been proposed to explain this anomalous selective tungsten growth.

Original languageEnglish
Pages (from-to)399-405
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume427
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 8 Apr 199611 Apr 1996

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