Abstract
Microphotoluminescence (μ-PL) of high-aspect-ratio Si nanopillars fabricated by etching Ni-nanodotSi O2 masked Si substrate is investigated. The 320-nm -tall Si nanopillars obtained by C F4 Ar mixed inductively coupled-plasma reactive ion etching process with density of 2.8× 1010 cm-2 further shrink size from 30 to 6 nm by oxidation and etching. Blue-green μ-PL with two decomposed wavelengths at 425 and 475 nm is attributed to oxygen-related defects on the oxidized Si nanopillar surface. Defect-related near-infrared PL at 703 and 740 nm remains unchanged, while a quantum-confinement-effect- dependent PL blueshifted from 874 to 826 nm as the Si nanopillar size reduces from 7.2 to 6.0 nm is preliminarily observed.
Original language | English |
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Article number | 143102 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 14 |
DOIs | |
State | Published - 13 Apr 2007 |