Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask

Gong Ru Lin*, Chun Jung Lin, Hao-Chung Kuo, Huang Sheng Lin, Chi Chiang Kao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Microphotoluminescence (μ-PL) of high-aspect-ratio Si nanopillars fabricated by etching Ni-nanodotSi O2 masked Si substrate is investigated. The 320-nm -tall Si nanopillars obtained by C F4 Ar mixed inductively coupled-plasma reactive ion etching process with density of 2.8× 1010 cm-2 further shrink size from 30 to 6 nm by oxidation and etching. Blue-green μ-PL with two decomposed wavelengths at 425 and 475 nm is attributed to oxygen-related defects on the oxidized Si nanopillar surface. Defect-related near-infrared PL at 703 and 740 nm remains unchanged, while a quantum-confinement-effect- dependent PL blueshifted from 874 to 826 nm as the Si nanopillar size reduces from 7.2 to 6.0 nm is preliminarily observed.

Original languageEnglish
Article number143102
JournalApplied Physics Letters
Volume90
Issue number14
DOIs
StatePublished - 13 Apr 2007

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