Abstract
Systematic studies of Cd diffusion into InSb were performed by a two-temperature zone method with InSb substrate and Cd source temperature controlled independently. Diffusion profiles were determined by C-V measurements and were found to be anomalous as in other III-V diffusion systems. The junction depth plotted against the square root of diffusion time was not a straight line through the origin, indicating that the standard interstitial-substitutional model and the conventional Boltzmann-Matano method can not be used to analyze the result. This non-linearity in Cd diffusion in In-Sb, predicted previously by Kolodny and Shappir, was confirmed experimentally in the present work. The Xj versus √t plot can be fitted rather nicely by a model similar to that proposed previously by assuming D(X, C) as functions of both diffusion depth and time. Furthermore, a modified Boltzmann-Matano method was used to deduce the diffusion coefficients and normalized diffusion curves of Cd into InSb were obtained.
Original language | English |
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Pages (from-to) | 463-467 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics |
Volume | 29 |
Issue number | 3 R |
DOIs | |
State | Published - 1 Jan 1990 |
Keywords
- Boltzmann-Matano analysis
- C-V profiling
- Cd diffusion in lnSb
- Two-temperature zone method