Anomalous diffusion of Cd in InSb

S. L. Tu*, Kai-Feng Huang, S. J. Yang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Systematic studies of Cd diffusion into InSb were performed by a two-temperature zone method with InSb substrate and Cd source temperature controlled independently. Diffusion profiles were determined by C-V measurements and were found to be anomalous as in other III-V diffusion systems. The junction depth plotted against the square root of diffusion time was not a straight line through the origin, indicating that the standard interstitial-substitutional model and the conventional Boltzmann-Matano method can not be used to analyze the result. This non-linearity in Cd diffusion in In-Sb, predicted previously by Kolodny and Shappir, was confirmed experimentally in the present work. The Xj versus √t plot can be fitted rather nicely by a model similar to that proposed previously by assuming D(X, C) as functions of both diffusion depth and time. Furthermore, a modified Boltzmann-Matano method was used to deduce the diffusion coefficients and normalized diffusion curves of Cd into InSb were obtained.

Original languageEnglish
Pages (from-to)463-467
Number of pages5
JournalJapanese Journal of Applied Physics
Volume29
Issue number3 R
DOIs
StatePublished - 1 Jan 1990

Keywords

  • Boltzmann-Matano analysis
  • C-V profiling
  • Cd diffusion in lnSb
  • Two-temperature zone method

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