Annealing temperature effect on the sensitivity of sige nanowire for bio-sensor

Kow-Ming Chang*, Chu Feng Chen, Yu Bin Wang, Chung Hsien Liu, Jiun Ming Kuo, Chiung Hui Lai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nanowire is widely used in biological sensor because it has the high surface-to-volume ratio. Germanium (Ge) would be beneficial to enhance the sensitivity of silicon nanowire for bio-sensor. In this study, we have successfully fabricated the SiGe on Insulator (SGOI) nanowires with different annealing temperature by side-wall spacer technique, respectively. The 3-amino-propyltrime-thoxy-silane (APTS) is used to modify the surface, which can connect the bio-linker. Nanowire is considered as a resistance, and the change of conductance (ΔG) and sensitivity (S) of different samples corresponding to APTS treatment were investigated. As annealing temperature was elevated from 800 to 950°C, the SiGe nanowire exhibited increasing sensitivity in the chemical detection. However, it was noted that degradation of sensitivity was observed as the annealing temperature increases up to 1000°C. This behavior may be associated with the reduction of the Ge concentration at the surface of SiGe nanowire due to high-temperature diffusion of Ge in Si. So, temperature is a key parameter in the annealing process producing two effects: repairs of defects and Ge diffusion. There would be an optimal annealing temperature between 900 and 1000°C.

Original languageEnglish
Title of host publicationBIODEVICES 2011 - Proceedings of the International Conference on Biomedical Electronics and Devices
Pages345-348
Number of pages4
DOIs
StatePublished - 15 Jul 2011
EventInternational Conference on Biomedical Electronics and Devices, BIODEVICES 2011 - Rome, Italy
Duration: 26 Jan 201129 Jan 2011

Publication series

NameBIODEVICES 2011 - Proceedings of the International Conference on Biomedical Electronics and Devices

Conference

ConferenceInternational Conference on Biomedical Electronics and Devices, BIODEVICES 2011
CountryItaly
CityRome
Period26/01/1129/01/11

Keywords

  • 3-amino-propyltrime-thoxy-silane (APTS)
  • Bio-sensor
  • SiGe
  • Silicon nanowire

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    Chang, K-M., Chen, C. F., Wang, Y. B., Liu, C. H., Kuo, J. M., & Lai, C. H. (2011). Annealing temperature effect on the sensitivity of sige nanowire for bio-sensor. In BIODEVICES 2011 - Proceedings of the International Conference on Biomedical Electronics and Devices (pp. 345-348). (BIODEVICES 2011 - Proceedings of the International Conference on Biomedical Electronics and Devices). https://doi.org/10.5220/0003153503450348