Annealing temperature effect on the performance of nonvolatile HfO 2 Si-oxide-nitride-oxide-silicon-type flash memory

Yu Hsien Lin*, Chao-Hsin Chien, Chun Yen Chang, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

In this article, we demonstrate the effect of the postdeposition annealing for the HfO2 trapping layer on the performance of the Si-oxide-nitride-oxide- silicon-type flash memories. It was found that the memory window becomes larger while the retention and endurance characteristics get worse as the annealing temperature increases. This was ascribed to the larger amount and the shallower energy levels of the crystallization-induced traps as compared to the traps presented in the as-fabricated HfO2 film. Finally, in the aspect of disturbances, we show only insignificant read, drain, and gate disturbances presented in the three samples in the normal operation.

Original languageEnglish
Pages (from-to)682-685
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number3
DOIs
StatePublished - 22 May 2006

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