Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs

Jenn-Fang Chen*, M. M. Huang, J. S. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The annealing behavior of nitrogen-implanted GaAs samples has been investigated by secondary ion mass spectroscopy, current-voltage (I-V) and capacitance-frequency (C-F) measurements. The I-V data show that the conductivity of as-implanted samples is dominated by variable-range hopping between defect states below 300 K. The implanted layer becomes highly resistive after annealing. The activation energy of the resistance is found to increase from 0.2 eV for as-implanted samples to 0.71 eV for 950°C-annealed samples. Significant capacitance dispersion is observed over frequency for implanted samples. Based on a proposed equivalent circuit, the high-frequency capacitance dispersion is shown to be the result of resistance-capacitance (RC) time constant effects. The increase of activation energy of the resistance can be explained by the creation of deep traps by high temperature annealing. Traps at 0.69 eV and 0.82 eV are detected for 700°C and 950°C-annealing respectively.

Original languageEnglish
Pages (from-to)487-492
Number of pages6
JournalJournal of Electronic Materials
Volume30
Issue number5
DOIs
StatePublished - 1 Jan 2001

Keywords

  • Annealing
  • Capacitance-frequency spectroscopy
  • Deep traps
  • Nitrogen implantation

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